Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation
Reexamination Certificate
2011-07-19
2011-07-19
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Groove formation
C438S243000, C438S259000, C438S270000, C438S272000, C438S400000, C257SE21065, C257SE21461
Reexamination Certificate
active
07981709
ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming a SiC film, forming trenches at a surface of the SiC film, heat-treating the SiC film with silicon supplied to the surface of the SiC film, and obtaining a plurality of macrosteps to constitute channels, at the surface of the SiC film by the step of heat-treating. Taking the length of one cycle of the trenches as L and the height of the trenches as h, a relation L=h(cot α+cot β) (where α and β are variables that satisfy the relations 0.5≦α, β≦45) holds between the length L and the height h. Consequently, the semiconductor device can be improved in property.
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Ahmadi Mohsen
Garber Charles D
Sartori Michael A.
Sumitomo Electric Industries Ltd.
Thelen Leigh D.
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