Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1994-07-22

1995-09-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257752, H01L 2940, H01L 2934

Patent

active

054481112

ABSTRACT:
A semiconductor substrate 11 having concavities and convexities in the upper surface, and silica particles (granular insulators) 15 provided in the concavities to planarize the entire upper surface of the semiconductor substrate 11 are included. First, the silica particles 15 are laid over an upper surface of a semiconductor substrate 11 to provide the granular insulators 15 in cavities in the upper surface of the semiconductor substrate 11, and the silica particles 15 provided on convexities on the upper surface of the semiconductor substrate 11 are removed, whereby the concavities 11 are buried with the silica particles 15 so as to improve global planarizarion.

REFERENCES:
patent: 3598761 (1971-08-01), Woulbroun et al.
patent: 4222792 (1980-09-01), Lever et al.
patent: 4514580 (1985-04-01), Bartlett
patent: 4804254 (1989-02-01), Doll et al.
patent: 5160998 (1992-11-01), Itoh et al.

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