Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2009-10-15
2011-10-11
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000, C257SE29081, C257SE29091, C257SE29246
Reexamination Certificate
active
08035128
ABSTRACT:
There is provided a semiconductor device and a method for fabricating the same whose withstanding characteristic may be enhanced and whose ON resistance may be reduced. A MIS-type HEMT includes a carrier traveling layer made of a group-III nitride semiconductor and formed on a supporting substrate, a carrier supplying layer made of a group-III nitride semiconductor and formed on the carrier traveling layer, source and drain electrodes formed on the carrier supplying layer, insulating films formed on the carrier supplying layer and a gate electrode formed on the insulating films. The insulating film is formed in a region interposed between the source and drain electrodes and has a trench whose cross-section is inverted trapezoidal and whose upper opening is wider than a bottom thereof. The gate electrode is formed at least from the bottom of the trench onto the insulating films on the side of the drain electrode.
REFERENCES:
patent: 7838904 (2010-11-01), Nakazawa et al.
patent: 2006/0289901 (2006-12-01), Sheppard et al.
patent: 2011/0089468 (2011-04-01), Zhang
patent: 11-261052 (1999-09-01), None
Ikeda Nariaki
Kaya Shusuke
Furukawa Electric Co. Ltd.
Ngo Ngan
Turocy & Watson LLP
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