Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-09-19

2010-11-16

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S300000, C257S528000, C438S171000, C438S190000

Reexamination Certificate

active

07834419

ABSTRACT:
A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.

REFERENCES:
patent: 3578943 (1971-05-01), Schoumaker
patent: 5754390 (1998-05-01), Sandhu et al.
patent: 5909620 (1999-06-01), Wu
patent: 6087694 (2000-07-01), Ohno et al.
patent: 6133088 (2000-10-01), Lou
patent: 6326316 (2001-12-01), Kiyotoshi et al.
patent: 6544857 (2003-04-01), Hironaka et al.
patent: 6580115 (2003-06-01), Agarwal
patent: 6849468 (2005-02-01), Jang et al.
patent: 6900517 (2005-05-01), Tanaka et al.
patent: 7042042 (2006-05-01), Won et al.
patent: 2001/0029053 (2001-10-01), Jaing et al.
patent: 2004/0025787 (2004-02-01), Selbrede et al.
patent: 2004/0248362 (2004-12-01), Nakamura et al.
patent: 2004/0262658 (2004-12-01), Rasmussen
patent: 2005/0224995 (2005-10-01), Lee et al.
patent: 2006/0073669 (2006-04-01), Kim et al.
patent: 2006/0263977 (2006-11-01), Kim et al.
patent: 2007/0269955 (2007-11-01), Yamamoto
patent: 2002-222934 (2002-08-01), None

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