Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2009-04-16
2010-12-14
Smith, Matthew S (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S638000, C257SE29002, C438S778000, C438S783000
Reexamination Certificate
active
07851891
ABSTRACT:
A method for fabricating a semiconductor device includes the steps of: forming a first insulating film on a semiconductor substrate; removing part of the first insulating film; forming a second insulating film having a leakage current density higher than that of the first insulating film on a region where the part of the first insulating film has been removed on the semiconductor substrate; forming an undoped semiconductor film on the first and second insulating films; implanting an impurity into part of the undoped semiconductor film, thereby defining semiconductor regions of a first conductivity type dotted as discrete islands; forming a third insulating film on the semiconductor regions of the first conductivity type and the undoped semiconductor film; and removing part of the third insulating film by wet etching. At least the second insulating film is formed under the semiconductor regions of the first conductivity type.
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Matsumoto Michikazu
Sengoku Naohisa
Fan Michele
McDermott Will & Emery LLP
Panasonic Corporation
Smith Matthew S
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