Semiconductor device and method for fabricating the same

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C257SE21008

Reexamination Certificate

active

07655531

ABSTRACT:
The semiconductor device comprises a capacitor formed over a semiconductor substrate10and including a lower electrode32, a dielectric film34formed over the lower electrode and an upper electrode36formed over the dielectric film, a first insulation film42formed over the semiconductor substrate and the capacitor, a first interconnection48formed over the first insulation film and electrically connected to the capacitor, a first hydrogen diffusion preventive film50for preventing the diffusion of hydrogen formed over the first insulation film, covering the first interconnection, a second insulation film58formed over the first hydrogen diffusion preventive film and having the surface planarized, a third insulation film62formed over the second insulation film, a second interconnection70bformed over the third insulation film, and a second hydrogen diffusion preventive film72for preventing the diffusion of hydrogen formed on the third insulation film, covering the second interconnection. Since the second hydrogen diffusion preventive film positioned above the capacitor is planarized, the dielectric film is surely prevented from being reduced with hydrogen.

REFERENCES:
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 6911686 (2005-06-01), Itoh
patent: 6953950 (2005-10-01), Sashida
patent: 7473980 (2009-01-01), Sashida et al.
patent: 2003/0030085 (2003-02-01), Ishihara
patent: 2003/0060007 (2003-03-01), Igarashi
patent: 2001-36026 (2001-02-01), None
patent: 2002-141485 (2002-05-01), None
patent: 2002-176149 (2002-06-01), None
patent: 2003-60164 (2003-02-01), None
patent: 2003-100994 (2003-04-01), None
patent: 2003-100995 (2003-04-01), None
patent: 2004-95861 (2004-03-01), None
International Search Report of PCT/JP2004/007259 date of Mailing Sep. 7, 2004.

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