Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-12-06

2009-10-27

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S221000, C438S296000, C257SE21540, C257SE21546, C257SE21549

Reexamination Certificate

active

07608518

ABSTRACT:
A method for fabricating a semiconductor device is provided. The method includes forming a pad oxide layer on a semiconductor substrate, forming a pad nitride layer on the pad oxide layer, forming a capping layer on the pad nitride layer, patterning the capping layer, the pad nitride layer, and the pad oxide layer by a photolithography method to expose portions of the semiconductor substrate, forming a field oxidation layer having bird's beaks, the bird's beaks being formed under the pad nitride layer, forming trenches in the semiconductor substrate by anisotropically etching the field oxide layer and the semiconductor substrate using the pad nitride layer as a mask, removing the capping layer, the pad nitride layer, the pad oxide layer, and the bird's beaks, and forming an isolation region in the trenches.

REFERENCES:
patent: 6492696 (2002-12-01), Morimoto et al.
patent: 6825544 (2004-11-01), Jin
patent: 7396729 (2008-07-01), Jeong et al.

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