Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-08-16

2009-06-09

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257S519000

Reexamination Certificate

active

07544582

ABSTRACT:
A semiconductor device and a method for fabricating the same may improve the isolation characteristics without deterioration of the junction diode characteristics and an increase in a threshold voltage of a MOS transistor. The device includes a semiconductor substrate; an STI layer in a predetermined portion of the semiconductor substrate, dividing the semiconductor substrate into an active region and a field region; and a field channel stop ion implantation layer in the semiconductor substrate under the STI layer.

REFERENCES:
patent: H204 (1987-02-01), Oh et al.
patent: 6144086 (2000-11-01), Brown et al.
patent: 6740954 (2004-05-01), Lee
patent: 6967316 (2005-11-01), Lee
patent: 6979628 (2005-12-01), Kim et al.
patent: 2001-0004450 (2001-01-01), None
patent: 10-0327348 (2002-02-01), None
Jae Kyu Lee: Semiconductor Capable of Decreasing Junction Leakage Current and Narrow Width Effect and Fabricating Method Thereof: Korean Patent Abstracts; Feb. 22, 2002; Publication No. 100327348 B1; Korean Intellectual Property Office, Republic of Korea.
Hyeong Jong Lee; Method for Separating Devices In Semiconductor Devices; Korean Patent Abstracts; Jan. 15, 2001; Publication No. 1020010004450 A; Korean Intellectual Property Office, Republic of Korea.

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