Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-07-25
2008-03-04
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S767000, C438S653000
Reexamination Certificate
active
07339270
ABSTRACT:
A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening. The fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.
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Matsushita Electric - Industrial Co., Ltd.
Picardat Kevin M.
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