Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-03-04
2008-03-04
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S296000, C438S587000, C438S588000
Reexamination Certificate
active
10625277
ABSTRACT:
Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.
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Notice of Preliminary Rejection issued by Korean Intellectual Property Office dated Nov. 29, 2004.
Office Action for Chinese Application No. 200310116172.7 and English Translation thereof (6 pages).
Choi Hyung-Bok
Kim Dong-Sauk
Kim Hyeong-Soo
Kim Jin-Woong
Kwon Il-Young
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Smith Zandra V.
Tran Thanh Y.
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