Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2007-12-11
2007-12-11
Sefer, Ahmed N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S311000, C257S315000, C257S316000, C257S331000, C257S390000, C257S391000, C257S393000, C257SE21682, C257SE27081, C257SE27103
Reexamination Certificate
active
10872554
ABSTRACT:
The semiconductor device comprises a gate electrode112formed over a semiconductor substrate10, a sidewall spacer116formed on the sidewall of the gate electrode112, a sidewall spacer144formed on the side wall of the gate electrode112with the sidewall spacer116formed on, and an oxide film115formed between the sidewall spacer116and the sidewall spacer144, and the semiconductor substrate10. The film thickness of the oxide film115between the sidewall spacer144and the semiconductor substrate10is thinner than the film thickness of the oxide film115between the sidewall spacer116and the semiconductor substrate10.
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Fujitsu Limited
Sefer Ahmed N.
Westerman, Hattori, Daniels & Adrian , LLP.
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