Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-07-24

2007-07-24

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S587000, C257S584000, C257S586000, C257S583000, C257S592000

Reexamination Certificate

active

10948264

ABSTRACT:
A semiconductor device includes a semiconductor substrate of a first conductive type, a collector layer formed on the semiconductor substrate and made of a first semiconductor being of the first conductive type and having a higher resistance than that of the semiconductor substrate, an intrinsic base region having a junction surface with the collector layer and made of a second semiconductor of a second conductive type, and an emitter region having a junction surface with the intrinsic base region and made of a third semiconductor of the first conductive type. A periphery of the intrinsic base region is surrounded by an insulating region extending from the collector layer to the semiconductor substrate.

REFERENCES:
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patent: 5616509 (1997-04-01), Hayashi
patent: 2002/0096742 (2002-07-01), Voldman
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Chinese Office Action issued in corresponding Chinese Patent Application No. 200410079861.X, dated Nov. 3, 2006.
S.M. Sze, “Physics and Technology of Semiconductor Devices”, Suzhou University Press, pp. 34-36, 2002.

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