Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-03-06
2007-03-06
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000, C257S280000, C257S284000, C257S743000, C257SE21407, C438S285000, C438S590000, C323S282000
Reexamination Certificate
active
10862452
ABSTRACT:
A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.
REFERENCES:
patent: 5563428 (1996-10-01), Ek et al.
patent: 5670798 (1997-09-01), Schetzina
patent: 5923058 (1999-07-01), Agarwal et al.
patent: 6521998 (2003-02-01), Teraguchi et al.
patent: 6861828 (2005-03-01), Watanabe
patent: 2001/0012678 (2001-08-01), Tanaka et al.
patent: 2002/0119610 (2002-08-01), Nishii et al.
patent: 2002/0139995 (2002-10-01), Inoue et al.
patent: 2002/0171405 (2002-11-01), Watanabe
patent: 2004/0061129 (2004-04-01), Saxler et al.
patent: 5-155958 (1993-06-01), None
patent: 9-172164 (1997-06-01), None
patent: 11-121472 (1999-04-01), None
Hirose Yutaka
Murata Tomohiro
Tanaka Tsuyoshi
Ueda Daisuke
Uemoto Yasuhiro
Chu Chris C.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery llp
Parker Kenneth
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