Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-07-24

2007-07-24

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S745000

Reexamination Certificate

active

10970026

ABSTRACT:
A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.

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patent: 2003-59946 (2003-02-01), None

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