Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2007-04-10

2007-04-10

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S583000, C438S655000, C438S664000, C438S682000, C257S382000, C257S384000, C257SE29160

Reexamination Certificate

active

11288093

ABSTRACT:
A semiconductor device includes: a gate electrode formed on a silicon substrate; source/drain regions formed at both sides of the gate electrode in the silicon substrate; and a silicide layer formed on the source/drain regions. The silicide layer includes a first silicide layer mainly made of a metal silicide having a formation enthalpy lower than that of NiSi and a second silicide layer formed on the first silicide and made of Ni silicide.

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