Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-12-05

2006-12-05

Andújar, Leonardo (Department: 2826)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S622000, C257S758000

Reexamination Certificate

active

07144761

ABSTRACT:
A semiconductor device includes metal interconnects made from a multi-layer film composed of a first metal film formed on a semiconductor substrate with an insulating film sandwiched therebetween and a second metal film deposited on the first metal film. An interlayer insulating film having a via hole is formed on the metal interconnects. A third metal film is selectively grown on the second metal film within the via hole, so that a plug can be formed from the third metal film.

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May 18, 2004 Office Action for JP Application No. 2000-327154 (in Japanese).
Japanese Patent Office Feb. 22, 2005 Notice of Reasons of Rejection for JP-2000-327154.

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