Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1998-02-10

1999-02-16

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257506, 257508, 257513, H01L 2900

Patent

active

058723889

ABSTRACT:
A semiconductor device having a bonded wafer structure capable of reducing crystal defect in a power element forming region thereof is disclosed. A recess is formed in a control circuit element forming region of a first n- silicon substrate, then filled with a silicon oxide film and subjected to grinding and polishing to provide a mirror-surface. An n- epitaxial layer is formed on the surface of a second n+ silicon substrate, then the surface of the epitaxial layer is coupled to the surfaces of the silicon oxide film and second circuit region of the first substrate and heat-treated to be bonded thereto.

REFERENCES:
patent: 4963505 (1990-10-01), Fujii et al.
patent: 4985745 (1991-01-01), Kitahara et al.
patent: 5164218 (1992-11-01), Tsuruta et al.
patent: 5204282 (1993-04-01), Tsuruta et al.
patent: 5223450 (1993-06-01), Fujino et al.
patent: 5234535 (1993-08-01), Beyer et al.
patent: 5241210 (1993-08-01), Nakagawa et al.
patent: 5356827 (1994-10-01), Ohoka
patent: 5374582 (1994-12-01), Okonogi et al.
patent: 5403769 (1995-04-01), Fujii
patent: 5420064 (1995-05-01), Okonogi et al.
patent: 5529947 (1996-06-01), Okonogi

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