Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-04-04

2006-04-04

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000

Reexamination Certificate

active

07022530

ABSTRACT:
A silicon oxide film102, a Pt film103x, a Ti film104xand a PZT film105xare deposited in this order over a Si substrate101. The Si substrate101is placed in a chamber106so that the PZT film105xis irradiated with an EHF wave108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate101.

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“A Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra-Low Voltage Operation”, F. Assaderaghi et al., 1994 IEEE, pp. 33.1.1-33.1.4.

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