Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-02-08
2005-02-08
Smith, Brad (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S734000, C257S773000, C257S774000
Reexamination Certificate
active
06853078
ABSTRACT:
On a substrate provided with a transistor, an electrode pad for product connected electrically to the transistor is formed. A metal bump is provided on a surface of the electrode pad for product. An electrode pad for test to be used specifically for a wafer-level burn-in, which is connected electrically to the transistor, is further formed on the substrate.
REFERENCES:
patent: 6451681 (2002-09-01), Greer
Shimomura Koji
Yamaya Kazufumi
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Smith Brad
LandOfFree
Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3470124