Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-03-15

2005-03-15

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including passive device

C438S272000, C438S589000, C438S527000, C438S682000, C438S307000, C438S270000, C438S283000

Reexamination Certificate

active

06867106

ABSTRACT:
The semiconductor device comprises: a conducting layer including: a channel region; a source region and a drain region sandwiching the channel region; and a body region connected to the channel region and being adjacent to the source region and the drain region; a gate electrode formed above the channel region interposing a gate insulation film therebetween; a dummy electrode formed on the body region near the interface between at least the drain region and the body region, and electrically insulated with the gate electrode; and a body contact region formed in the body region except a region where the dummy electrode is formed. The gate electrode and the dummy electrode are electrically insulated with each other, whereby the semiconductor device having body contacts can have a gate capacitance much decreased. Accordingly, deterioration of the speed performance of the transistors can be suppressed.

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patent: Hei 07-221314 (1995-08-01), None
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