Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-01-04

2005-01-04

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming base region of specified dopant concentration profile

C257S197000, C257S592000

Reexamination Certificate

active

06838349

ABSTRACT:
The semiconductor device comprises a first semiconductor layer14formed on a semiconductor substrate10; an outgoing base electrode26formed on the first semiconductor layer14; a base layer32formed on the first semiconductor layer, connected to the outgoing base electrode at a side surface of the outgoing base electrode, and formed of silicon germanium containing carbon; and a second semiconductor layer36formed on the base layer. The base layer32of silicon germanium contains carbon, which prevents the action of interstitial silicon atoms, which are very influential to diffusion of boron. As a result, when the emitter layer36, etc. are subjected to heat processing at, e.g., about 950° C., the diffusion of boron out of the base layer32can be prevented.

REFERENCES:
patent: 5001533 (1991-03-01), Yamaguchi
patent: 6387768 (2002-05-01), Sakamoto
patent: 6537369 (2003-03-01), Saitoh

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