Semiconductor device and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier

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257472, 438 72, 438570, 438573, 438574, 438576, 438579, H01L 27095

Patent

active

059947535

ABSTRACT:
In a method for fabricating a semiconductor device, an insulating layer is formed on a semiconductor substrate, then a resist layer is formed on the insulating layer to have an opening therein. Next, removing the insulating layer at the bottom of the opening, then a reflow process is performed to the resist layer to have a curved surface thereon.

REFERENCES:
Wolf, S., Tauber R.N.; Silicon Processing for the VLSI Era vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, pp. 429-446, Jan. 1986.

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