Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1994-10-03

1997-12-09

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

257779, 257786, H01L 2706, H01L 2704

Patent

active

056964064

ABSTRACT:
A first groove for an upper interconnection and a second groove for a bonding pad are formed on a silicon dioxide film including a lower interconnection, and a through-hole is formed to connect the first groove to the lower interconnection. At the same time with the formation of the through-hole, the second groove is deepened by the common etching process. Then, an Al film is formed on the silicon dioxide film, and the Al film is polished to be removed except for the Al film in the first and second grooves to provide the upper interconnection and the bonding pad.

REFERENCES:
patent: 5223084 (1993-06-01), Uesato et al.
"Jun. 11-12, 1991 VMIC Conference", pp. 144 to 152.

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