Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1998-09-29

1999-09-14

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 18, 257 14, 257280, H01L 2906, H01L 310328, H01L 310336, H01L 31072

Patent

active

059526726

ABSTRACT:
The semiconductor device comprises an (Al.sub.x Ga.sub.1-x)InP layer 20 epitaxially grown on a semiconductor substrate 10 and having a region where the (Al.sub.x Ga.sub.1-x)InP layer 20 has a spontaneous superlattice broken to have a disordered configuration of Al, In and Ga in plane of a Group III atomic layer; and a semiconductor layer 22 epitaxially grown on the (Al.sub.x Ga.sub.1-x)InP layer 20 and having the same conductivity type as the (Al.sub.x Ga.sub.1-x)InP layer 20. In forming the semiconductor layer on the (Al.sub.x Ga.sub.1-x)InP layer, the spontaneous superlattice of the ground (Al.sub.x Ga.sub.1-x)InP layer is broken, whereby the interface between the (Al.sub.x Ga.sub.1-x)InP layer and the semiconductor layer has less traps. Accordingly, low contact resistance can be obtained between the (Al.sub.x Ga.sub.1-x)InP layer and the semiconductor layer.

REFERENCES:
patent: 5311035 (1994-05-01), Nire
patent: 5436468 (1995-07-01), Nakata et al.
patent: 5608229 (1997-03-01), Mukai et al.

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