Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

1990-08-08

1991-12-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 34, 437 29, 437 90, H01L 21265, H01L 2973

Patent

active

050772279

ABSTRACT:
Disclosed is a structure of a semiconductor integrated circuit such as bipolar transistor, along with the fabrication thereof, in which an active device region such an intrinsic base is formed from, at least, the bottom of the groove formed in a semiconductor substrate, and this active device region and a low resistance electrode take-out region such an extrinsic base formed around the groove are connected favorably with each other.

REFERENCES:
patent: 4495512 (1985-01-01), Isaac et al.
patent: 4583106 (1986-04-01), Anantha et al.
Barson, "Improved NPN Process and Structure", IBM Technical Disclosure Bulletin, vol. 23, No. 9, Feb. 1981.

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