Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-09-22
1999-11-09
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257 66, 257 69, H01L 2994
Patent
active
059819740
ABSTRACT:
A semiconductor device includes a plurality of thin film transistors on a substrate having an insulating surface. A channel region of the thin film transistor comprises a crystalline Si film crystallized by a successive irradiation with a pulse laser beam in a scanning pitch P. A size Xs of the channel region in the scanning direction of the pulse laser beam and the scanning pitch P of the pulse laser beam have a relationship approximately equal to Xs=nP where n is an integer of 1 or more.
REFERENCES:
patent: 5403762 (1995-04-01), Takemura
patent: 5583347 (1996-12-01), Misawa et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5789763 (1998-08-01), Kato et al.
Martin-Wallace Valencia
Sharp Kabushiki Kaisha
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