Semiconductor device and method for fabricating a...

Details Semiconductor device and method for fabricating a... Semiconductor device and method for fabricating a...

2005-12-28

2008-03-25

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S074000, C438S404000, C438S481000, C438S570000, C257SE21564

Reexamination Certificate

active

07348255

ABSTRACT:
A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers for device isolation are buried into the recessed portions. Second insulation layers for device isolation are formed on sidewalls of the first insulation layers.

REFERENCES:
patent: 6228691 (2001-05-01), Doyle
patent: 6919258 (2005-07-01), Grant et al.
patent: 7029964 (2006-04-01), Cheng et al.

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