Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-30
2011-08-30
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S690000, C257S787000, C257S724000, C257SE23020
Reexamination Certificate
active
08008773
ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.
REFERENCES:
patent: 4617609 (1986-10-01), Utner et al.
patent: 6853074 (2005-02-01), Kitae et al.
patent: 6867133 (2005-03-01), Kanetaka et al.
patent: 7019396 (2006-03-01), Sawada et al.
patent: 7256501 (2007-08-01), Okamoto et al.
patent: 7432594 (2008-10-01), Ashida et al.
patent: 7786587 (2010-08-01), Hoshino et al.
patent: 2001/0026017 (2001-10-01), Seto
patent: 2002/0020896 (2002-02-01), Ishikawa et al.
patent: 2006/0198079 (2006-09-01), Shim et al.
patent: 2007/0128794 (2007-06-01), Kusano et al.
patent: 2004-165314 (2004-06-01), None
Fukumitsu Masako
Higuchi Kazuhito
Iguchi Tomohiro
Kato Kyoko
Kitani Tomoyuki
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Parekh Nitin
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