Semiconductor device and method for fabricating...

Details Semiconductor device and method for fabricating... Semiconductor device and method for fabricating...

2011-05-03

2011-05-03

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S687000, C257SE21586, C257SE23019

Reexamination Certificate

active

07936070

ABSTRACT:
A semiconductor device includes: a copper (Cu) wire having a first region and a second region in which densities of silicon (Si) and oxygen (O) atoms are higher than in the first region; a compound film that is selectively formed on the Cu wire and contains Cu and Si; and a dielectric film formed on a side surface side of the Cu wire.

REFERENCES:
patent: 6181013 (2001-01-01), Liu et al.
patent: 7718548 (2010-05-01), Lee et al.
patent: 2005/0194683 (2005-09-01), Yu et al.
patent: 2006/0211235 (2006-09-01), Usami
patent: 2007/0018329 (2007-01-01), Oh et al.
patent: 2007/0123043 (2007-05-01), Streck et al.
patent: 2006-261440 (2006-09-01), None
patent: 2007-27769 (2007-02-01), None
U.S. Appl. No. 12/652,204, filed Jan. 5, 2010, Hayashi et al.

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