Semiconductor device and method

Details Semiconductor device and method Semiconductor device and method

1990-12-03

1992-02-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437150, 437904, 148DIG174, 357 13, H01L 2104

Patent

active

050894277

ABSTRACT:
The manufacturing yield and properties of Zener diodes and other PN junctions are improved by locating the main PN junction remote from the die surface and providing at least two shallower concentric P regions of lighter doping surrounding the main P region. A first shallow P region contacts the main P region and a second extends to the die edge and is separated from the first region by an annular N region. Metallization contacting the main P region extends over the first shallow P region but not over the annular N region. Contact to the N substrate is conveniently made on the rear surface of the die.

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patent: 4742021 (1988-05-01), Burnham
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patent: 4797371 (1989-01-01), Kuroda
patent: 4835111 (1989-05-01), Wright et al.
patent: 4886762 (1989-12-01), Boland et al.
patent: 4977107 (1990-12-01), Moran

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