Semiconductor device and method

Details Semiconductor device and method Semiconductor device and method

1995-05-16

1997-01-28

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 59, 437 67, 437 74, 437 78, 437 90, H01L 21265

Patent

active

055977421

ABSTRACT:
The base region of the power stage and the horizontal isolation region of the integrated control circuit or collector region of a transistor of an integrated circuit consist of portions of an epitaxial layer with a first conductivity type grown in sequence on an underlying epitaxial layer with a second conductivity type opposite the first.

REFERENCES:
patent: 4379726 (1983-04-01), Kumamaru et al.
patent: 4780430 (1988-10-01), Musumeci et al.
patent: 5034337 (1991-03-01), Mosher et al.
S. M. Sze, "Semiconductor Devices Physics and Technology", 1985, pp. 110-111.

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