Semiconductor device and memory

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Reexamination Certificate

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C365S205000, C365S208000, C365S227000

Reexamination Certificate

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07876637

ABSTRACT:
A semiconductor device of the present invention comprises a first step-down voltage circuit to generate a first step-down voltage lower than an externally-supplied power supply voltage, and a second step-down voltage circuit to generate a second step-down voltage lower than the first step-down voltage. The first step-down voltage circuit has a withstand voltage no lower than the power supply voltage and the second step-down voltage circuit has a withstand voltage no lower than the first step-down voltage.

REFERENCES:
patent: 5337282 (1994-08-01), Koike
patent: 6072739 (2000-06-01), Kokubo
patent: 6198683 (2001-03-01), Ishii et al.
patent: 6671217 (2003-12-01), Takemura et al.
patent: 6934210 (2005-08-01), Akiba et al.
patent: 7002397 (2006-02-01), Kubo et al.
patent: 7088636 (2006-08-01), Akiba et al.
patent: 2005/0083762 (2005-04-01), Ikai et al.
patent: 2005/0276110 (2005-12-01), Sakurai et al.
patent: 2006/0214731 (2006-09-01), Kelly et al.
patent: 2000-149565 (2000-05-01), None
patent: 2003-257181 (2003-09-01), None

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