Semiconductor device and manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With integrated trigger signal amplification means

Reexamination Certificate

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C257S159000

Reexamination Certificate

active

08080831

ABSTRACT:
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.

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Office Action in JP 2002-377030, dated Jun. 22, 2010 (in Japanese) [3 pages].

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