Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With integrated trigger signal amplification means
Reexamination Certificate
2010-05-21
2011-12-20
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With integrated trigger signal amplification means
C257S159000
Reexamination Certificate
active
08080831
ABSTRACT:
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
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Office Action in JP 2002-377030, dated Jun. 22, 2010 (in Japanese) [3 pages].
Hoshino Yutaka
Morikawa Masatoshi
Nakayama Fumitaka
Uchiyama Tetsuo
Antonelli, Terry Stout & Kraus, LLP.
Renesas Eastern Japan Semiconductor Inc.
Renesas Electronics Corporation
Smith Bradley K
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