Semiconductor device and manufacturing process thereof

Details Semiconductor device and manufacturing process thereof Semiconductor device and manufacturing process thereof

2007-11-05

2008-11-18

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S140000, C438S148000, C257S342000, C257S378000, C257S474000

Reexamination Certificate

active

07452756

ABSTRACT:
The semiconductor device according to one of the aspects of the present invention includes a semiconductor substrate of a first conductivity type, having upper and lower surfaces. A collector region of a second conductivity type is formed on the lower surface of the semiconductor substrate, and a collector electrode is formed on the collector region. Also, at least one pair of isolation regions of the second conductivity type are formed extending from the upper surface of the semiconductor substrate to the collector layer for defining a drift region of the first conductivity type, in conjunction with the collector region. A base region of the second conductivity type is formed adjacent the upper surface of the semiconductor substrate and within the drift region, and an emitter region of the first conductivity type is formed adjacent the upper surface of the semiconductor substrate and within the base region. A gate electrode is formed opposing to the base region via an insulating layer. An emitter electrode is formed on the emitter region. The collector layer has thickness in the range between 17 μm to 50 μm.

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