Semiconductor device and manufacturing process thereof

Details Semiconductor device and manufacturing process thereof Semiconductor device and manufacturing process thereof

1982-04-16

1986-01-21

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 29589, 29591, 148 15, 148DIG50, 148DIG131, 427 47, 427 38, 427 39, 156647, 156657, 357 55, H01L 2176, H01L 21302

Patent

active

045649979

ABSTRACT:
A semiconductor device in which a film of an insulator a conductor is closely deposited in a groove formed in a semiconductor substrate or an insulating or conductor layer thereon to planarize the surface thereof.
A semiconductor device manufacturing process in which a specimen is selectively etched away through using a resist pattern as a mask, a pattern forming film is deposited by a plasma deposition technique on the specimen, and the resist film is removed, whereby the pattern forming film closed fills up a groove formed by etching to provide a planarized surface.

REFERENCES:
patent: 3856588 (1974-12-01), Hashimoto et al.
patent: 4004044 (1977-01-01), Franco et al.
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4407851 (1983-10-01), Kurosawa et al.
patent: 4419810 (1983-12-01), Riseman
patent: 4440804 (1984-04-01), Milgram
patent: 4445967 (1984-05-01), Kameyama
patent: 4448800 (1984-05-01), Ehara et al.
patent: 4469527 (1984-09-01), Sugano et al.
patent: 4481229 (1984-11-01), Suzuki et al.
Sze, "VLSI Technology", McGraw-Hill Book Co., 1983, p. 125.
"ECR CVD", Nikkei: Micro devices, 1985, pp. 93-100.
Arai, "Submicron MOS VLSI Process Technologies", IEDM 83, pp. 19-22.
Wakita et al., "Small Surface Damage Facet Coating on InGaAsP/InP Laser by ECR Plasma Deposition", Jap. Jour. Appl. Phy. vol. 23, No. 8, Aug. 1984, pp. L556-L558.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing process thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing process thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing process thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2292798