Semiconductor device and manufacturing process for providing dev

Details Semiconductor device and manufacturing process for providing dev Semiconductor device and manufacturing process for providing dev

1988-07-19

1990-10-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 63, 437 70, H01L 2100, H01L 2984

Patent

active

049607251

ABSTRACT:
There is provided a semiconductor device which comprises device regions and isolation regions to isolate the device regions from each other on a semiconductor substrate, wherein field insulators are formed in the isolation regions and conduction layers for wiring are formed above the field insulators. An additional impurity buried layer having an opposite conductivity to the semiconductor substrate is formed under the field insulators. Therefore the first capacitance element is composed of the conductive layer, the impurity buried layer, and the field insulator therebetween. The second capacitance element is composed of the impurity buried layer, the semiconductor substrate, and a PN junction layer therebetween. Thus the first capacitance element and the second capacitance element are connected in series.

REFERENCES:
patent: 3400310 (1968-09-01), Dorendorf et al.
patent: 4290078 (1981-09-01), Ronen
patent: 4385947 (1983-05-01), Halfacre et al.
patent: 4442529 (1984-04-01), Ahuja et al.
patent: 4574467 (1986-03-01), Halfacre et al.

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