Semiconductor device and manufacturing method thereof for removi

Details Semiconductor device and manufacturing method thereof for removi Semiconductor device and manufacturing method thereof for removi

1998-05-04

2000-08-29

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, 216 41, H01L 21302

Patent

active

061108340

ABSTRACT:
Reaction products due to etching of a semiconductor sample by using a reactive gas are removed by using a liquid chemical that contains sulfuric acid and hydrofluoric acid at a volume mixing ratio of (5 to 7):(1/400 to 1/1000) and is kept at 25.degree.-70.degree. C. Reaction products and a resist mask are removed simultaneously by using a liquid chemical that contains sulfuric acid, a hydrogen peroxide solution, and hydrofluoric acid at a volume mixing ratio of (5 to 7):1:(1/400 to 1/1000) and is kept at 70.degree.-100.degree. C.

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"Jap. J. Appl. Phys. 35 (4A) pt1, 1989-1992 "(1996).
"Proc Electrochem Soc. 95-20;p. 6065 "(1996).

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