Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-06-07

2011-06-07

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S369000, C257S392000, C257SE29193

Reexamination Certificate

active

07956390

ABSTRACT:
A semiconductor device having a semiconductor substrate, a first impurity region including a first conductive impurity formed in the semiconductor substrate, a first transistor and a second transistor formed in the first impurity region, a first stress film and a second stress having a first stress over the first transistor a and the second transistor, and a third stress film having a second stress different from the first stress provided in the first impurity region between the first stress film and the second stress film.

REFERENCES:
patent: 2007/0102755 (2007-05-01), Adams et al.
Paul Grudowski et al.“1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations,” 2006 Symposium on VLSI Technology; The Japan Society of Applied Physics; Jun. 13-15, 2006; pp. 76-77.

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