Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-08-16

2011-08-16

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257SE27015, C257SE29013, C257SE29338, C257S021000, C257S021000

Reexamination Certificate

active

07999345

ABSTRACT:
Provided is a technology, in a semiconductor device having a power MISFET and a Schottky barrier diode on one semiconductor substrate, capable of suppressing a drastic increase in the on-resistance of the power MISFET while making the avalanche breakdown voltage of the Schottky barrier diode greater than that of the power MISFET. In the present invention, two epitaxial layers, one having a high doping concentration and the other having a low doping concentration, are formed over a semiconductor substrate and the boundary between these two epitaxial layers is located in a region equal in depth to or shallower than the bottom portion of a trench.

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Wolf et al., “Silicon Processing for the VLSI Era”, 2000, Lattice Press, pp. 324-331.
Kwok, “Complete guide to semiconductor devices”, 2002, Wiley-Interscience, pp. 31-41.

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