Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-08-23

2011-08-23

Luu, Chuong A (Department: 2813)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S689000, C257SE21499

Reexamination Certificate

active

08003444

ABSTRACT:
A method of manufacturing a semiconductor device28in which a plating mask38, 39having a noble metal plating layer35as an uppermost layer is formed at a predetermined portion on an obverse surface side or a reverse surface side of a leadframe material10, and the leadframe material10is consecutively subjected to etching by using the plating mask38, 39as a resist mask, so as to form external connection terminal portions22which electrically communicate with a semiconductor element18disposed in an interior of an encapsulating resin21, and which project downwardly. Base metal plating or noble metal plating33exhibiting etching solution resistance is provided as a lowermost layer of the plating mask38, 39.

REFERENCES:
patent: 4585528 (1986-04-01), Matsumoto
patent: 5548890 (1996-08-01), Tada et al.
patent: 6238952 (2001-05-01), Lin
patent: 6451627 (2002-09-01), Coffman
patent: 6551859 (2003-04-01), Lee et al.
patent: 2006/0022316 (2006-02-01), Huang et al.
patent: 59 208756 (1984-11-01), None
patent: 61-285742 (1986-12-01), None
patent: 4-212443 (1992-08-01), None
patent: 7-231062 (1995-08-01), None
patent: 8-255864 (1996-10-01), None
patent: A-2001-24135 (2001-01-01), None
patent: 2001-156239 (2001-06-01), None
patent: 2005-57162 (2005-03-01), None
patent: 2005-89820 (2005-04-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2644651