Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-08-16

2011-08-16

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S106000, C438S108000, C438S127000, C257S737000, C257S774000, C257SE23011, C257SE23020, C257SE23068

Reexamination Certificate

active

07998796

ABSTRACT:
The present invention provides a technique capable of suppressing variations in the height of each solder ball where an NSMD is used as a structure for each land. Vias that extend through a wiring board are provided. Lands are formed at the back surface of the wiring board so as to be coupled directly to the vias respectively. The lands are respectively formed so as to be internally included in openings defined in a solder resist. Half balls are mounted over the lands respectively. Namely, the present invention has a feature in that the configuration of coupling between each of the lands and its corresponding via both formed at the back surface of the wiring board is taken as a land on via structure and a configuration form of each land is taken as an NSMD.

REFERENCES:
patent: 5994773 (1999-11-01), Hirakawa
patent: 6016013 (2000-01-01), Baba
patent: 6551862 (2003-04-01), Oota et al.
patent: 6879041 (2005-04-01), Yamamoto et al.
patent: 7166916 (2007-01-01), Akamatsu et al.
patent: 7387917 (2008-06-01), Choi et al.
patent: 7655506 (2010-02-01), Tabira
patent: 2002-368154 (2002-12-01), None
patent: 2006-190928 (2006-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2623933