Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1999-06-29
2000-12-12
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 60, 257 66, H01L 2904, H01L 31036, H01L 310376, H01L 3130
Patent
active
06160268&
ABSTRACT:
This invention is related to a method for controlling a threshold voltage of a bottom gate type thin film transistor as follows. Gate electrodes and a gate insulating film are formed on a glass substrate. An amorphous silicon film is formed thereon and then crystallized into a crystalline silicon film. After a buffer layer is formed thereon, an impurity element (selected from Group 13 or Group 15 elements) for a threshold voltage control is added to the crystalline silicon film by ion implantation or ion doping.
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Meier Stephen D.
Semiconductor Energy Laboratory Co,. Ltd.
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