Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1997-10-03

2000-10-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

H01L 23544

Patent

active

061277371

ABSTRACT:
In a semiconductor device with a trench-type element isolation structure, alignment can be performed with high accuracy without any deterioration in device performance. The surfaces of silicon oxide films (2B, 2C) embedded in trenches (10B, 10C) of an element forming region including a memory cell region (11B) and a peripheral circuit region (11C) in a semiconductor substrate (1), respectively, are almost level with the surface of the semiconductor substrate (1). On the other hand, the surface of a silicon oxide film (2A) embedded in a trench (10A) is formed lower than the surface of the semiconductor substrate (1).

REFERENCES:
patent: 5310691 (1994-05-01), Suda
patent: 5329334 (1994-07-01), Yim et al.
patent: 5578519 (1996-11-01), Cho

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