Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-01-12

2011-11-01

Michener, Jennifer K. (Department: 1728)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S252000, C136S255000, C438S063000, C438S089000

Reexamination Certificate

active

08049103

ABSTRACT:
A semiconductor device is provided, which comprises a first electrode, crystalline semiconductor particles, a semiconductor layer, and a second electrode. The crystalline semiconductor particles of which adjacent particles are fusion-bonded, the crystalline semiconductor particles have a first conductivity type, and the semiconductor layer has a second conductivity type which is different from the first conductivity type.

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