Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2010-05-04

2011-10-18

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having structure increasing breakdown voltage

C257S335000, C257S336000, C438S454000

Reexamination Certificate

active

08039323

ABSTRACT:
A semiconductor device includes a semiconductor layer with an impurity of a first conductivity type diffused therein, and a local insulating layer, source layer, and a drain layer formed therein. The drain layer has an impurity of a second conductivity type opposite to the first conductivity type. A gate electrode is formed over the semiconductor layer extending from over the local insulating layer to the source layer. A low-concentration diffusion layer is formed in the semiconductor layer below the drain layer. First and second gate insulating films are formed between the gate electrode and the semiconductor layer, and respectively extending from an end, on the source layer side, of the gate electrode to the local insulating layer without reaching the local insulating layer, and extending from an end on another side of the local insulating layer to the source layer.

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patent: 2007-067181 (2007-03-01), None
Kawaguchi et al., 0.6 μm BiCMOS Based 15 and 25V LDMOS for Analog Applications, 2001, Proceedings of 2001 International Symposium on Power Semiconductor Devices & IC, pp. 169-172, Osaka.

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