Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-06-10

2011-10-18

Luu, Chuong A (Department: 2813)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S135000, C257SE29183

Reexamination Certificate

active

08039322

ABSTRACT:
A manufacturing method of a semiconductor device10includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole.

REFERENCES:
patent: 5372954 (1994-12-01), Terashima
patent: 2009/0079085 (2009-03-01), Hannuki et al.
patent: 2006-303410 (2006-11-01), None

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