Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-12-23

2011-10-11

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S347000, C257S621000, C257SE27112

Reexamination Certificate

active

08035192

ABSTRACT:
A semiconductor device has a semiconductor chip and through electrodes formed passing through the semiconductor chip. A ground layer connected to the through electrode and a patch antenna connected to the through electrode are provided through an inorganic insulating layer formed of SiO2or SiN on a second face opposite to a first face (main face) of the semiconductor chip.

REFERENCES:
patent: 2008/0020488 (2008-01-01), Clevenger et al.
patent: 2004-22667 (2004-01-01), None
patent: 2007-36571 (2007-02-01), None

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4256253