Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2009-08-13

2011-12-27

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S522000, C257S763000, C257SE21641, C438S319000, C438S421000

Reexamination Certificate

active

08084794

ABSTRACT:
A semiconductor device includes a first wiring extending in a first direction and a second wiring extending in a second direction which crosses the first direction and being disposed with a space interposed between the first wiring and the second wiring, and including a tantalum layer, a tantalum nitride layer formed over the tantalum layer, and a metal layer formed over the tantalum nitride layer.

REFERENCES:
patent: 6104917 (2000-08-01), Ketonen
patent: 2001/0048459 (2001-12-01), Sakai et al.
patent: 2007/0102727 (2007-05-01), Twynam
patent: 2007/0114606 (2007-05-01), Hoshino et al.
patent: 2008/0142989 (2008-06-01), Hayashi et al.
patent: 2003-197740 (2003-07-01), None
patent: 2007-150282 (2007-06-01), None

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