Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-12-03
2010-06-01
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S786000, C257SE23010
Reexamination Certificate
active
07728430
ABSTRACT:
A polygonal semiconductor device includes a substrate and a wiring layer. The substrate includes semiconductor circuit elements. The wiring layer includes a dielectric sealing layer, a plurality of first electrodes, and a plurality of second electrodes. The first and second electrodes both extend through the dielectric sealing layer in its thickness direction. The first electrodes are electrically connected to the semiconductor circuit elements. Each of the corners of the polygonal device is formed, throughout the thickness of the wiring layer, by one of the second electrodes. The corners of the device are thereby reinforced, as the electrode material is tougher than the dielectric sealing material.
REFERENCES:
patent: 7126227 (2006-10-01), Yamaguchi
patent: 2003-158217 (2003-05-01), None
patent: 2005-142186 (2005-06-01), None
patent: 2006-121120 (2006-05-01), None
Dickey Thomas L
Erdem Fazli
Oki Semiconductor Co., Ltd.
Rabin & Berdo PC
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