Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2006-06-12
2010-06-01
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S456000, C438S928000, C438S959000, C438S977000
Reexamination Certificate
active
07727859
ABSTRACT:
It is an object of the present invention to provide a semiconductor device in which a barrier property is improved; a compact size, a thin shape, and lightweight are achieved; and flexibility is provided. By providing a stacked body including a plurality of transistors in a space between a pair of substrates, a semiconductor device is provided, in which a harmful substance is prevented from entering and a barrier property is improved. In addition, by using a pair of substrates which are thinned by performing grinding and polishing, a semiconductor device is provided, in which a compact size, a thin shape, and lightweight are achieved. Further, a semiconductor device is provided, in which flexibility is provided and a high-added value is achieved.
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Office Action (Application No. 200610101627.1) Dated Dec. 25, 2009.
Maruyama Junya
Moriya Yoshitaka
Watanabe Yasuko
Novacek Christy L
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co. Ltd
Smith Zandra
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